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Hynix, ProMOS deepening tech partnership, add ownership stake
May 8, 2008 - Hynix Semiconductor and ProMOS Technologies have agreed to a partnership that will allow access to the Korean chipmaker's 50nm-node DRAM stack process technology, and give Hynix access to more 300mm capacity and an 8%-10% ownership stake in the Taiwan memory firm.

Edge: the final cleaning frontier
by Ed Korczynski, Senior Technical Editor, Solid State Technology
May 7, 2008 - Applied Materials product manager Paul Miller tells WaferNEWS about the inner workings of the company's new Inflexion edge polishing system that uses mechanical abrasion for removing defects on the wafer edge, touting 2× faster throughput than "competing" tools and an inherently "green" process.

Current Issues, Newsletters and Resource Guides

SST

MLW

Tech Talk

Princeton tips way to "melt" chip features
(May 5 2008)

TSMC announces entry into MEMS market
(May 5 2008)

Fujitsu tips method for estimating soft errors due to "cosmic rays"
(April 30 2008)

Spansion, IBM ink memory license pact
(April 29 2008)

Suss, Philips developing new nanoimprint tech
(April 29 2008)

IBM, Matheson to develop ≤32nm chip gases
(April 29 2008)

Intel, Cray to develop supercomputer chips
(April 28 2008)

Rohm, Nissan developing high-power chips
(April 25 2008)

Around the industry

Qualcomm, Foxlink expanding MEMS work
(May 8 2008)

DuPont expanding in China to chase PV growth
(May 7 2008)

SEMI: Wafer shipments flat in 1Q08
(May 7 2008)

Analyst: Big 4 still rule foundry roost, but Samsung moving up
(May 6 2008)

Chip heavyweights pin down 450mm date, tout "collaboration"
(May 6 2008)

Mentor, NXP to share DFT tools, technology, dev't
(May 6 2008)

Analyst: Metrology/inspection sector did better in 2007, but still underperformed
(May 6 2008)

SVTC's Laetz tips solar growth work, plans
(May 5 2008)

From The Wires

Rudolph Technologies receives ... Business Wire (May 8, 2008)	Applied Materials ships 200th ... Business Wire (May 8, 2008)
Report: Analog division may ... AFX News Limited (May 8, 2008)	Mattson Technology unveils ... PR Newswire (May 8, 2008)
Report: SMIC to announce ... Xinhua Economic News (May 8, 2008)	Metryx and Hermes-Epitek ... Business Wire (May 7, 2008)
Hermes-Epitek to sell/service ... Business Wire (May 7, 2008)	Taiwan's Motech Industries ... Market Wire (May 7, 2008)

From the Current Issue

Despite engineering and cost challenges, 32nm node IC manufacturing within reach		System-in-package integration of passives using 3D through-silicon vias
Fully gate-all-around silicon nanowire CMOS devices		Lithography’s future: tougher than ever
Business Trends		Etching new IC materials at 32nm and 22nm
Submicron micromachining technology for liquid phase chromatography separation		Product News

Products

Wafer News Financials

Equip. / Mat.

Chipmakers

NYSE

Wafernews Equipment/Materials

314.49 +2.19 (+0.70%)

Index	Price	Change (%)
Equip. / Mat.	314.49	+2.19 (+0.70%)
Chipmakers	131.01	+0.94 (+0.72%)
NYSE	9388.54	+49.07 (+0.53%)
NSDQ	2451.24	+12.75 (+0.52%)
S&P 500	1397.68	+5.11 (+0.37%)

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QuickVote

The US government is handing out "economic stimulus payments" hoping to spur consumer spending and boost the flagging economy. So how will you spend your check?

Videocasts

2008 SPIE Advanced Lithography Conference: SST On the Scene video interviews

DFM Segment
Letting down the guard - propagating design intent; impact of double patterning immersion lithography; challenges at 32nm and 22nm

Lithography technology segment
Extendibility of immersion litho; double patterning and double exposure; readiness of EUV; viability of NIL?

SEMICON West 2007:SST On the Scene video interviews
July 22, 2007

Praxair Electronics Technology Forum
Convergence in going from 45nm to 32nm?
Don’t even think about it!
The evening’s theme may have been Zen-like - enlightenment and sharing knowledge - but the presenters and panelists at the Praxair Electronics Technology Forum zeroed in on areas of contention facing IC manufacturers as they go from 45nm to 32nm. IC manufacturers are pursuing multiple, and sometimes divergent, solutions for controlling process variability, high-k/metal gates, and annealing. Debra Vogler, Sr. Technical Editor, was on hand to cover the event and interview presenters and panelists for Solid State Technology’s video interview program, SST On the Scene.

AMD Segment
Unresolved metrology issues at 45nm…challenges at 32nm…AMD goes lean

Webcasts

How Dual Channel Pulse Testing Simplifies Characterizing RF Transistors
Original broadcast on
March 4, 2008

Atomic Layer Deposition (ALD)
Original broadcast on
October 31, 2007

Process and Metrology Challenges at 65nm and Beyond: Substrates and Strain
Original broadcast on
September 28, 2007

Sponsored White Papers Library

Recently Added White Papers

Characterizing New Materials with Electron Microscopy (04/08/2008, FEI Company)

Electrical Nanoprobing with DualBeam™ Systems (04/02/2008, FEI Company)

Site-Specific 3D Characterization of Semiconductor Devices with DualBeam™ Systems (04/02/2008, FEI Company)

Advanced Photolithography for Substrates (10/02/2006, Azores Corp )

Cost-Effective Lithography for Mobile Display Production (10/02/2006, Azores Corp )

Upcoming Events

The ConFab May 18 -21, 2008 Las Vegas, NV United States

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