June 12, 2007 - Tezzaron Semiconductor says it is ramping its 2D "3T-iRAM" line of 72Mbit memory devices at Singapore foundry Chartered Semiconductor on the foundry's 0.13-micron process technology, claiming the technology mimics today's' fastest SRAM with better speed and reliability and less power usage.

The two said they worked closely to improve the technology's manufacturability and reduce manufacturing costs. "Chartered's capabilities have been instrumental in implementing them with the reliability and cost model we require," said JT Ayers, CEO of Tezzaron, in a statement.

Meanwhile, the two firms are also moving ahead to develop 3D-ICs using Tezzaron's process of building hundreds of thousands of embedded through-silicon vias dubbed "super contacts" into the circuitry on each wafer (instead of just connecting at the I/O). The wafers are then aligned, bonded, thinned, and diced.

First plans are to double-stack the 72Mbit devices to create a 144Mbit SRAM "drop-in" replacement. Eventually, they will offer many types of 3D IC memories in two, three, and up to five layers using the TSV technique, which Tezzaron claims enables ultrahigh capacity devices and "chips with built-in repair capabilities."