Exclusive video from 2008 SPIE Advanced Lithography Conference

SST On The Scene investigates

Immersion at 32/22nm, but EUV makes headway as NIL comes on strong.

Solid State Technology magazine’s Senior Technical Editor Debra Vogler explores with industry thought leaders--representing chipmakers, consortia, consultants, and suppliers--the readiness of double-patterning and high-index immersion lithography, defectivity in immersion lithography, meeting overlay tolerances, and the readiness of extreme ultraviolet (EUV) technology to be inserted at 22nm.

Through these short video clips, you’ll see that there remains a diversity of opinion on the readiness of EUV for 22nm (one expert predicts it will be ready for production at 22nm). Still, the EUV photoresist challenge may be the most difficult to overcome, more so than the source. And amid the excitement about immersion and EUV comes what might be considered a breakout moment for nanoimprint lithography (NIL): could it be ready for volume CMOS manufacturing at sub-30nm? Papers from end-users of NIL and reports of mix and match 193nm lithography with NIL are sure to provoke discussion.

Debra Vogler of Solid State Technology interviews Harry Levinson, Manager of Strategic Lithography Technology and Sr. Fellow at AMD at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Debra Vogler of Solid State Technology interviews Griff Resor, President of Resor Associates at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Debra Vogler of Solid State Technology interviews Stefan Wurm, Program Manager, EUV Strategy at SEMATECH at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Debra Vogler of Solid State Technology interviews Kurt Ronse, Director of Lithography at IMEC at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Debra Vogler of Solid State Technology interviews Mark Melliar-Smith, CEO of Molecular Imprints at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Debra Vogler of Solid State Technology interviews J. Tracy Weed, Director, Manufacturing Products Group at Molecular Imprints at the 2008 SPIE Advanced Lithography Conference.; 193nm lithography; 22nm; CMOS manufacturing; Extreme Ultraviolet (EUV); Lithography; SST on the Scene at SPIE; double patterning; high-index immersion lithography; meeting overlay tolerances; nanoimprint lithography (NIL); solid state technology; Solid State Technology magazine Senior Technical Editor Debra Vogler explores the readiness of extreme ultraviolet (EUV) technology to be inserted at 22nm. http://link.brightcove.com/services/link/bcpid1407913585http://www.brightcove.com/channel.jsp?channel=1214147015